CPH6122 no.7225-1/4 applications ? relay drivers, lamp drivers, motor drivers, flash. features ? adoption of mbit process. ? high current capacitance. ? low collector-to-emitter saturation voltage. ? high-speed switching. ? ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). ? high allowable power dissipation. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo --30 v collector-to-emitter voltage v ceo --30 v emitter-to-bass voltage v ebo -- 5 v collector current i c -- 3 a collector current (pulse) i cp -- 5 a bass current i b --600 ma collector dissipation p c mounted on ceramic board (600mm 2 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =--30v, i e =0a --0.1 m a emitter cutoff current i ebo v eb =--4v, i c =0a --0.1 m a dc current gain h fe v ce =--2v, i c =--500ma 200 560 gain-bandwidth product f t v ce =--10v, i c =--500ma 400 mhz output capacitance cob v cb =--10v, f=1mhz 25 pf marking : aw continued on next page. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en7225a o1106ea sy im / 72602 ts im ta-100026 any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. sanyo semiconductors data sheet CPH6122 pnp epitaxial planar silicon transistor dc / dc converter applications
CPH6122 no.7225-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-emitter saturation voltage v ce (sat)1 i c =--1.5a, ib=--30ma --180 --270 mv v ce (sat)2 i c =--1.5a, ib=--75ma --120 --180 mv base-to-emitter saturation voltage v be (sat) i c =--1.5a, i b =--30ma --0.83 --1.2 v collector-to-base breakdown voltage v (br)cbo i c =--10 m a, i e =0a --30 v collector-to-emitter breakdown voltage v (br)ceo i c =--1ma, r be = --30 v emitter-to-bass breakdown voltage v (br)ebo i e =--10 m a, i c =0a --5 v turn-on time t on see specified test circuit. 50 ns storage time t stg see specified test circuit. 270 ns fall time t f see specified test circuit. 27 ns package dimensions switching time test circuit unit : mm (typ) 7018a-002 1 : collector 2 : collector 3 : base 4 : emitter 5 : collector 6 : collector sanyo : cph6 3 2 1 64 5 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 v r r b v cc = --12v v be =5v --20i b 1=20i b 2=i c = --500ma ++ 50 w input output 24 w 100 m f 470 m f pw=20 m s i b1 d.c. 1% i b2 i c -- v ce it04554 i c -- v be it04555 f t -- i c it04557 gain-bandwidth product, f t -- mhz collector-to-emitter voltage, v ce -- v collector current, i c -- a bass-to-emitter voltage, v be -- v collector current, i c -- a collector current, i c -- a h fe -- i c it04556 dc current gain, h fe collector current, i c -- a 0 0 --0.6 --0.4 --0.2 --0.8 --1.2 --1.4 --1.6 --2.0 --1.8 --0.2 --1.0 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 --50ma --30ma --10ma --8ma --6ma --4ma --2ma --20ma --40ma i b =0ma 0 --0.2 --0.4 --0.6 --0.8 --1.0 0 --0.5 --1.0 --1.5 --2.0 --3.0 --2.5 ta=75 c 25 c --25 c v ce = --2v --0.01 23 57 23 57 --0.1 --1.0 23 57 --10 100 10 1000 2 3 5 7 2 3 5 7 v ce = --2v --25 c 25 c ta=75 c --0.01 23 57 23 5 23 5 7 --0.1 --1.0 7 100 2 5 3 v ce = --10v
CPH6122 no.7225-3/4 -- 1.0 23 57 23 -- 10 2 3 5 7 10 100 cob -- v cb it04558 output capacitance, cob -- pf collector-to-base voltage, v cb -- v f=1mhz v cb (sat) -- i c it04559 collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv v ce (sat) -- i c it04560 collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v v be (sat) -- i c it04561 collector current, i c -- a a s o it04562 0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1.2 1.3 1.4 1.0 p c -- ta it04563 collector-to-emitter voltage, v ce -- v collector current, i c -- a ambient temperature, ta -- c collector dissipation, p c -- w mounted on a ceramic board (600mm 2 5 0.8mm) ta=75 c 25 c --25 c --0.01 23 57 7 --0.1 23 5 23 5 7 --1.0 2 3 5 7 2 3 5 7 --10 --100 --1000 i c / i b =20 23 57 23 57 --0.1 --0.01 --1.0 23 57 --10 2 3 2 3 5 7 2 3 5 7 --10 --100 --1000 ta=75 c --25 c 25 c i c / i b =50 75 c 25 c ta= --25 c 23 57 7 --0.1 --0.01 23 5 23 5 7 --1.0 2 7 5 --1.0 i c / i b =50 --0.1 --0.01 --0.1 3 5 7 2 3 5 7 2 3 5 7 2 --1.0 --10 3 -- 1.0 257 3 -- 10 23 2 55 7 <50 m s 500 m s 1ms 10ms 100 m s 100ms ta=25 c single pulse mounted on a ceramic board (600mm 2 5 0.8mm) dc operation i c = --3a i cp = --5a
CPH6122 no.7225-4/4 specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ps this catalog provides information as of october, 2006. specifications and information herein are subject to change without notice.
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